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PHPT61003NYX

Nexperia USA Inc.
PHPT61003NYX Preview
Nexperia USA Inc.
TRANS NPN 100V 3A LFPAK56 PWRSO8
$0.50
Available to order
Reference Price (USD)
1,500+
$0.19380
3,000+
$0.17670
7,500+
$0.16530
10,500+
$0.15960
Exquisite packaging
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Nexperia USA Inc. PHPT61003NYX is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PHPT61003NYX

PHPT61003NYX

$0.50

Product details

Experience superior semiconductor performance with the PHPT61003NYX, a high-efficiency Bipolar Junction Transistor from Nexperia USA Inc.. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The PHPT61003NYX demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Nexperia USA Inc. produces the PHPT61003NYX using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the PHPT61003NYX stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
  • Power - Max: 1.25 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-100, SOT-669
  • Supplier Device Package: LFPAK56, Power-SO8

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