PDTB123YT,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
$0.31
Available to order
Reference Price (USD)
1+
$0.34000
10+
$0.25400
100+
$0.14720
500+
$0.10010
1,000+
$0.07854
Exquisite packaging
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PDTB123YT,215
$0.31
Product details
The PDTB123YT,215 represents Nexperia USA Inc.'s commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability access technical resources and procurement options by inquiring about the PDTB123YT,215 today.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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