Shopping cart

Subtotal: $0.00

PDTA114EQC-QZ

Nexperia USA Inc.
PDTA114EQC-QZ Preview
Nexperia USA Inc.
PDTA114EQC-Q/SOT8009/DFN1412D-
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Nexperia USA Inc. PDTA114EQC-QZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PDTA114EQC-QZ

PDTA114EQC-QZ

$0.29

Product details

Engineered for efficiency, the PDTA114EQC-QZ pre-biased BJT by Nexperia USA Inc. delivers superior signal amplification in compact packages. Its built-in bias network eliminates external components, reducing board space and assembly costs. The transistor excels in load switching, LED driving, and audio pre-amplification scenarios. Notable characteristics involve thermal shutdown protection, wide operating temperature ranges, and compatibility with automated pick-and-place systems. Industries leveraging this solution include industrial automation (PLC signal conditioning), consumer electronics (battery management systems), and telecommunications (signal repeaters). Streamline your BOM with this versatile component request a quote now for lead time details.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 180 MHz
  • Power - Max: 360 mW
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3

Viewed products

Rohm Semiconductor

DTA043ZUBTL

$0.00 (not set)
onsemi

MUN5211T1

$0.00 (not set)
Rohm Semiconductor

DTA014EUBTL

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2425(TE85L,F)

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1107MFV,L3XHF(CT

$0.00 (not set)
onsemi

DTC143EM3T5G

$0.00 (not set)
Diodes Incorporated

DDTC143TUA-7

$0.00 (not set)
Rohm Semiconductor

DTA024XEBTL

$0.00 (not set)
onsemi

SMMUN2215LT1G

$0.00 (not set)
Nexperia USA Inc.

PDTB143XTR

$0.00 (not set)
Top