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PDTA114EM,315

Nexperia USA Inc.
PDTA114EM,315 Preview
PDTA114EM,315 Preview
PDTA114EM,315
PDTA114EM,315
Nexperia USA Inc.
TRANS PREBIAS PNP 250MW SOT883
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03296
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Nexperia USA Inc. PDTA114EM,315 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PDTA114EM,315

PDTA114EM,315

$0.04

Product details

The PDTA114EM,315 from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased single transistor offers reliable switching and amplification, making it ideal for low-power circuits. With optimized thermal performance and consistent operation, it ensures stability in various electronic designs. The compact form factor and robust construction cater to modern PCB layouts. Key features include integrated bias resistors for simplified circuit design, low saturation voltage for energy efficiency, and high current gain for enhanced signal processing. Typical applications include automotive control modules, IoT sensor interfaces, and portable medical devices. Upgrade your projects with the PDTA114EM,315 submit your inquiry today for bulk pricing and datasheets.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: SOT-883

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