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PBSS4350Z,135

Nexperia USA Inc.
PBSS4350Z,135 Preview
Nexperia USA Inc.
TRANS NPN 50V 3A SOT223
$0.44
Available to order
Reference Price (USD)
4,000+
$0.11911
8,000+
$0.11330
12,000+
$0.10458
28,000+
$0.09877
100,000+
$0.09587
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Nexperia USA Inc. PBSS4350Z,135 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PBSS4350Z,135

PBSS4350Z,135

$0.44

Product details

Optimize your circuit performance with the PBSS4350Z,135, a precision Bipolar Junction Transistor from Nexperia USA Inc.. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The PBSS4350Z,135 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Nexperia USA Inc. employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The PBSS4350Z,135 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223

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