PBRP113ZT,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 40V TO236AB
$0.38
Available to order
Reference Price (USD)
3,000+
$0.06375
6,000+
$0.05625
15,000+
$0.04875
30,000+
$0.04625
75,000+
$0.04375
150,000+
$0.04125
Exquisite packaging
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PBRP113ZT,215
$0.38
Product details
Nexperia USA Inc.'s PBRP113ZT,215 sets the benchmark for pre-biased BJTs with its advanced epitaxial process, yielding superior current handling per footprint area. The device demonstrates exceptional beta linearity under varying collector currents, crucial for instrumentation amplifiers. Its applications span across electric vehicle charging stations, precision agricultural sensors, and industrial IoT gateways. The transistor's hermetically sealed variants address military-grade reliability requirements, while standard versions cater to commercial electronics. Features like solder-dip finish and tape-reel packaging accommodate high-volume manufacturing. Simplify your amplifier designs download the PBRP113ZT,215 SPICE model after registering on our technical portal.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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