PBHV9050T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 500V 0.15A TO236AB
$0.47
Available to order
Reference Price (USD)
3,000+
$0.17820
6,000+
$0.16830
15,000+
$0.16335
Exquisite packaging
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PBHV9050T,215
$0.47
Product details
Discover the PBHV9050T,215, a high-efficiency Bipolar Junction Transistor from Nexperia USA Inc. designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The PBHV9050T,215 demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the PBHV9050T,215 simplifies circuit design challenges. Nexperia USA Inc.'s commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
- Power - Max: 300 mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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