NHUMB9X
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2PNP 80V 6TSSOP
$0.07
Available to order
Reference Price (USD)
1+
$0.06997
500+
$0.0692703
1000+
$0.0685706
1500+
$0.0678709
2000+
$0.0671712
2500+
$0.0664715
Exquisite packaging
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NHUMB9X
$0.07
Product details
Explore the NHUMB9X from Nexperia USA Inc., a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The NHUMB9X features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the NHUMB9X provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the NHUMB9X is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the NHUMB9X can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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