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GAN063-650WSAQ

Nexperia USA Inc.
GAN063-650WSAQ Preview
Nexperia USA Inc.
GANFET N-CH 650V 34.5A TO247-3
$15.04
Available to order
Reference Price (USD)
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$15.04000
500+
$14.8896
1000+
$14.7392
1500+
$14.5888
2000+
$14.4384
2500+
$14.288
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Nexperia USA Inc. GAN063-650WSAQ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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GAN063-650WSAQ

GAN063-650WSAQ

$15.04

Product details

Enhance your electronic designs with the GAN063-650WSAQ single MOSFET transistor from Nexperia USA Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The GAN063-650WSAQ features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the GAN063-650WSAQ particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the GAN063-650WSAQ represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 143W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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