Shopping cart

Subtotal: $0.00

BST51,135

Nexperia USA Inc.
BST51,135 Preview
Nexperia USA Inc.
TRANS NPN DARL 60V 1A SOT89
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Nexperia USA Inc. BST51,135 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BST51,135

BST51,135

$0.71

Product details

Optimize your circuit performance with the BST51,135, a precision Bipolar Junction Transistor from Nexperia USA Inc.. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The BST51,135 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Nexperia USA Inc. employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The BST51,135 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1.3 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89

Viewed products

onsemi

MJB42CT4G

$0.00 (not set)
NTE Electronics, Inc

NTE2430

$0.00 (not set)
Diodes Incorporated

DSS5240Y-7

$0.00 (not set)
Diodes Incorporated

DZT5551-13

$0.00 (not set)
Microchip Technology

2N2222AUB

$0.00 (not set)
Panjit International Inc.

BC848C-AU_R1_000A1

$0.00 (not set)
Yangzhou Yangjie Electronic Technology Co.,Ltd

BC847BW-F2-0000HF

$0.00 (not set)
Fairchild Semiconductor

KSB564ACYBU

$0.00 (not set)
NXP USA Inc.

PBSS5260QA147

$0.00 (not set)
onsemi

2N4921G

$0.00 (not set)
Top