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BC847BMB,315

Nexperia USA Inc.
BC847BMB,315 Preview
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
$0.25
Available to order
Reference Price (USD)
10,000+
$0.03218
30,000+
$0.03053
50,000+
$0.02888
100,000+
$0.02723
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Nexperia USA Inc. BC847BMB,315 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BC847BMB,315

BC847BMB,315

$0.25

Product details

Upgrade your electronic designs with the BC847BMB,315, a high-reliability Bipolar Junction Transistor from Nexperia USA Inc.. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The BC847BMB,315 demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Nexperia USA Inc. subjects each BC847BMB,315 unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the BC847BMB,315 delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: DFN1006B-3

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