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BC817-40QAZ

Nexperia USA Inc.
BC817-40QAZ Preview
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1010D-3
$0.34
Available to order
Reference Price (USD)
5,000+
$0.05378
10,000+
$0.04661
25,000+
$0.04422
50,000+
$0.04183
125,000+
$0.03944
Exquisite packaging
Discount
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EMS 3-7 days

Nexperia USA Inc. BC817-40QAZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BC817-40QAZ

BC817-40QAZ

$0.34

Product details

The BC817-40QAZ from Nexperia USA Inc. represents advanced Bipolar Junction Transistor technology in the Discrete Semiconductor Products category. This single BJT solution provides superior current amplification with minimal power loss, making it ideal for energy-sensitive designs. The transistor's optimized geometry reduces parasitic effects that can compromise circuit performance. Engineers value its predictable characteristics and tight parameter distribution across production lots. The BC817-40QAZ excels in both common-emitter and common-base configurations, offering design flexibility. Applications span from small-signal processing in consumer electronics to power management in industrial systems. Electric vehicle components, smart home devices, and test equipment manufacturers regularly specify this BJT. The device meets international safety and performance certifications, giving designers confidence in their selections. Its compatibility with automated assembly processes streamlines manufacturing workflows. Nexperia USA Inc. backs the BC817-40QAZ with comprehensive technical support and reliable supply chain management. To discuss how this transistor can optimize your specific application, please submit your requirements through our online inquiry system.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
  • Power - Max: 900 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3

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