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BC807-40W,115

Nexperia USA Inc.
BC807-40W,115 Preview
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03035
6,000+
$0.02737
15,000+
$0.02380
30,000+
$0.02142
75,000+
$0.01904
150,000+
$0.01666
Exquisite packaging
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Nexperia USA Inc. BC807-40W,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BC807-40W,115

BC807-40W,115

$0.21

Product details

Experience superior semiconductor performance with the BC807-40W,115, a high-efficiency Bipolar Junction Transistor from Nexperia USA Inc.. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The BC807-40W,115 demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Nexperia USA Inc. produces the BC807-40W,115 using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the BC807-40W,115 stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323

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