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MSR830AGC-1512

MoSys, Inc.
MSR830AGC-1512 Preview
MoSys, Inc.
IC SRAM 1.152GBIT PAR 676BGA
$712.50
Available to order
Reference Price (USD)
1+
$712.50000
500+
$705.375
1000+
$698.25
1500+
$691.125
2000+
$684
2500+
$676.875
Exquisite packaging
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MoSys, Inc. MSR830AGC-1512 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MSR830AGC-1512

MSR830AGC-1512

$712.50

Product details

Discover the MSR830AGC-1512 by MoSys, Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The MSR830AGC-1512 features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The MSR830AGC-1512 is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this MoSys, Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the MSR830AGC-1512, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: 1T-SRAM
  • Memory Size: 1.152Gb (16M x 72)
  • Memory Interface: Parallel
  • Clock Frequency: 1.25 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.7 ns
  • Voltage - Supply: 1V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 676-BGA
  • Supplier Device Package: 676-BGA (27x27)

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