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MWT-PH8F

Microwave Technology Inc.
MWT-PH8F Preview
Microwave Technology Inc.
TRANS ALGAAS/INGAAS PHEMT
$85.25
Available to order
Reference Price (USD)
1+
$85.25000
500+
$84.3975
1000+
$83.545
1500+
$82.6925
2000+
$81.84
2500+
$80.9875
Exquisite packaging
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Microwave Technology Inc. MWT-PH8F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MWT-PH8F

MWT-PH8F

$85.25

Product details

Upgrade your RF systems with the MWT-PH8F RF MOSFET transistor from Microwave Technology Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The MWT-PH8F offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the MWT-PH8F ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The MWT-PH8F ensures accurate and stable signal processing in all scenarios. Microwave Technology Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the MWT-PH8F is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the MWT-PH8F from Microwave Technology Inc. for superior RF performance.

General specs

  • Product Status: Active
  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 12dB
  • Voltage - Test: 3 V
  • Current Rating (Amps): 300mA
  • Noise Figure: -
  • Current - Test: 1 mA
  • Power - Output: 30dBm
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip

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