MWT-PH32F
Microwave Technology Inc.
Microwave Technology Inc.
TRANS ALGAAS/INGAAS PHEMT
$28.95
Available to order
Reference Price (USD)
1+
$28.95000
500+
$28.6605
1000+
$28.371
1500+
$28.0815
2000+
$27.792
2500+
$27.5025
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MWT-PH32F
$28.95
Product details
Enhance your RF circuitry with the MWT-PH32F RF MOSFET transistor from Microwave Technology Inc., a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The MWT-PH32F features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the MWT-PH32F maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The MWT-PH32F is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The MWT-PH32F delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. Microwave Technology Inc. has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the MWT-PH32F is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the MWT-PH32F from Microwave Technology Inc..
General specs
- Product Status: Active
- Transistor Type: pHEMT FET
- Frequency: 12GHz
- Gain: 13dB
- Voltage - Test: 2 V
- Current Rating (Amps): 360mA
- Noise Figure: -
- Current - Test: 1 mA
- Power - Output: 30.5dB
- Voltage - Rated: -
- Package / Case: Die
- Supplier Device Package: Chip
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