JAN2N3811
Microsemi Corporation
Microsemi Corporation
TRANS 2PNP 60V 0.05A TO78
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microsemi Corporation JAN2N3811 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
JAN2N3811
$0.00
Product details
The JAN2N3811 from Microsemi Corporation redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The JAN2N3811 features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The JAN2N3811 is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The JAN2N3811 also plays vital roles in advanced communication systems. Microsemi Corporation has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The JAN2N3811 represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.
General specs
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
Viewed products