APTSM120AM55CT1AG
Microsemi Corporation
Microsemi Corporation
POWER MODULE - SIC
$0.00
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Reference Price (USD)
100+
$142.05440
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APTSM120AM55CT1AG
$0.00
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V
- Power - Max: 470W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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