Shopping cart

Subtotal: $0.00

APTSM120AM09CD3AG

Microsemi Corporation
APTSM120AM09CD3AG Preview
Microsemi Corporation
MOSFET 2 N-CH 1200V 337A MODULE
$0.00
Available to order
Reference Price (USD)
100+
$615.88880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microsemi Corporation APTSM120AM09CD3AG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APTSM120AM09CD3AG

APTSM120AM09CD3AG

$0.00

Product details

Discover the APTSM120AM09CD3AG from Microsemi Corporation, a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe APTSM120AM09CD3AG features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the APTSM120AM09CD3AG today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module

Viewed products

Renesas Electronics America Inc

UPA2385T1P-E1-A

$0.00 (not set)
Toshiba Semiconductor and Storage

TPCL4201(TE85L,F)

$0.00 (not set)
Central Semiconductor Corp

CTLDM8120-M832DS BK

$0.00 (not set)
Vishay Siliconix

SIB911DK-T1-E3

$0.00 (not set)
IXYS

FMK75-01F

$0.00 (not set)
Nexperia USA Inc.

BUK9MJJ-65PLL,518

$0.00 (not set)
Analog Devices Inc./Maxim Integrated

MAX620EJN/R70564

$0.00 (not set)
Central Semiconductor Corp

CTLDM7120-M832D TR

$0.00 (not set)
Renesas Electronics America Inc

UPA2324T1P-E1-A#YK1

$0.00 (not set)
Microsemi Corporation

APTM20DHM16T3G

$0.00 (not set)
Top