APTSM120AM09CD3AG
Microsemi Corporation
Microsemi Corporation
MOSFET 2 N-CH 1200V 337A MODULE
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Reference Price (USD)
100+
$615.88880
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APTSM120AM09CD3AG
$0.00
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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