Shopping cart

Subtotal: $0.00

APTM60A23FT1G

Microsemi Corporation
APTM60A23FT1G Preview
Microsemi Corporation
MOSFET 2N-CH 600V 20A SP1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microsemi Corporation APTM60A23FT1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APTM60A23FT1G

APTM60A23FT1G

$0.00

Product details

The APTM60A23FT1G by Microsemi Corporation is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe APTM60A23FT1G features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the APTM60A23FT1G. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.

General specs

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1

Viewed products

Diodes Incorporated

2N7002DWKX-13

$0.00 (not set)
IXYS

FMP76-010T

$0.00 (not set)
Infineon Technologies

IPG20N04S409AATMA1

$0.00 (not set)
Renesas Electronics America Inc

UPA2376T1P-E1-A#YK1

$0.00 (not set)
Infineon Technologies

FS03MR12A6MA1LB

$0.00 (not set)
onsemi

MCH6606-TL-E

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AON6884L

$0.00 (not set)
Microchip Technology

APTMC120HM17CT3AG

$0.00 (not set)
Nexperia USA Inc.

BUK9MTT-65PBB,518

$0.00 (not set)
Analog Devices Inc.

STM1683411

$0.00 (not set)
Top