APTM120TDU57PG
Microsemi Corporation
Microsemi Corporation
MOSFET 6N-CH 1200V 17A SP6-P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microsemi Corporation APTM120TDU57PG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APTM120TDU57PG
$0.00
Product details
The APTM120TDU57PG by Microsemi Corporation is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the APTM120TDU57PG include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the APTM120TDU57PG. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.
General specs
- Product Status: Obsolete
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 17A
- Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
Viewed products
