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APTM120A80FT1G

Microsemi Corporation
APTM120A80FT1G Preview
Microsemi Corporation
MOSFET 2N-CH 1200V 14A SP1
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APTM120A80FT1G

APTM120A80FT1G

$0.00

Product details

General specs

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 960mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1

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