APTM100A46FT1G
Microsemi Corporation
Microsemi Corporation
MOSFET 2N-CH 1000V 19A SP1
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APTM100A46FT1G
$0.00
Product details
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 19A
- Rds On (Max) @ Id, Vgs: 552mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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