APTGV50H60BG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 80A 176W SP4
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APTGV50H60BG
$0.00
Product details
Experience superior performance with the APTGV50H60BG transistor module by Microsemi Corporation. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The APTGV50H60BG is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the APTGV50H60BG is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Obsolete
- IGBT Type: NPT, Trench Field Stop
- Configuration: Boost Chopper, Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 176 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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