APTGT75A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 110A 357W D1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microsemi Corporation APTGT75A120D1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APTGT75A120D1G
$0.00
Product details
The APTGT75A120D1G from Microsemi Corporation is a high-performance IGBT module designed for demanding industrial applications. This advanced discrete semiconductor product offers superior efficiency and reliability, making it ideal for power conversion and motor control systems. With robust construction and optimized thermal management, the APTGT75A120D1G ensures consistent performance in harsh environments. Key features include low switching losses, high current capacity, and excellent thermal stability. These characteristics make it a preferred choice for engineers seeking durable and efficient solutions. The APTGT75A120D1G is widely used in renewable energy systems, such as solar inverters and wind turbines, where efficiency is critical. It also finds applications in industrial motor drives, providing precise control and energy savings. Additionally, this IGBT module is suitable for electric vehicle charging stations, ensuring fast and reliable power delivery. For detailed specifications and pricing, submit an inquiry today to learn how the APTGT75A120D1G can enhance your project.
General specs
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 357 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
Viewed products