APTGT100A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 150A 520W D1
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APTGT100A120D1G
$0.00
Product details
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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