2N4427
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 40V 500MHZ TO39
$0.00
Available to order
Reference Price (USD)
1+
$3.00000
10+
$2.67800
25+
$2.40960
100+
$2.19560
250+
$1.98136
500+
$1.77786
1,000+
$1.49940
2,500+
$1.42800
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2N4427
$0.00
Product details
Microsemi Corporation's 2N4427 represents the next evolution in RF BJT transistors, combining cutting-edge semiconductor technology with practical design features. This discrete semiconductor product excels in high-frequency switching and amplification tasks, featuring optimized junction characteristics for superior current handling. The transistor's innovative architecture reduces parasitic capacitance while maintaining excellent power gain across its operational bandwidth. Key advantages include a wide dynamic range for variable input signals, improved thermal dissipation properties, and consistent batch-to-batch performance reliability. Designed for mission-critical applications, it performs exceptionally in 5G network infrastructure components and microwave relay systems. Broadcast engineers utilize its clean signal reproduction in FM/HD radio transmitters and television broadcasting equipment. In the transportation sector, it enables reliable communication in railway signaling and aviation navigation systems. The 2N4427 also supports emerging technologies like quantum computing research equipment and RFID tracking systems. Its lead-free construction complies with global environmental standards without sacrificing performance. For system designers seeking a balance between RF precision and power efficiency, this transistor delivers outstanding results. Microsemi Corporation provides comprehensive technical documentation and application notes to simplify your design process. Take the next step in your RF project complete our online inquiry form to receive personalized pricing and delivery options for the 2N4427.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB @ 175MHz
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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