MT58L512L18DT-7.5
Micron Technology Inc.
Micron Technology Inc.
CACHE SRAM, 512KX18, 4NS PQFP100
$8.53
Available to order
Reference Price (USD)
1+
$8.53000
500+
$8.4447
1000+
$8.3594
1500+
$8.2741
2000+
$8.1888
2500+
$8.1035
Exquisite packaging
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Micron Technology Inc. MT58L512L18DT-7.5 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MT58L512L18DT-7.5
$8.53
Product details
The MT58L512L18DT-7.5 by Micron Technology Inc. represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The MT58L512L18DT-7.5 demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The MT58L512L18DT-7.5 also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Micron Technology Inc. memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the MT58L512L18DT-7.5 memory solution.
General specs
- Product Status: Active
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