Shopping cart

Subtotal: $0.00

MT58L256V18F1T-10

Micron Technology Inc.
MT58L256V18F1T-10 Preview
Micron Technology Inc.
IC SRAM 4MBIT PARALLEL 100TQFP
$4.99
Available to order
Reference Price (USD)
1+
$4.99000
500+
$4.9401
1000+
$4.8902
1500+
$4.8403
2000+
$4.7904
2500+
$4.7405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Micron Technology Inc. MT58L256V18F1T-10 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MT58L256V18F1T-10

MT58L256V18F1T-10

$4.99

Product details

Discover the MT58L256V18F1T-10 by Micron Technology Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The MT58L256V18F1T-10 features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The MT58L256V18F1T-10 is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Micron Technology Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the MT58L256V18F1T-10, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 66 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 10 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)

Viewed products

Renesas Electronics America Inc

71V2556S100PFGI

$0.00 (not set)
Renesas Electronics America Inc

71V3559S75BQ8

$0.00 (not set)
ISSI, Integrated Silicon Solution Inc

IS61NLP102436B-200B3LI-TR

$0.00 (not set)
STMicroelectronics

M95010-WMN6P

$0.00 (not set)
onsemi

NV24C64DTVLT3G

$0.00 (not set)
Microchip Technology

AT25128B-XHL-T

$0.00 (not set)
Alliance Memory, Inc.

AS4C64M8D3L-12BINTR

$0.00 (not set)
Infineon Technologies

S29GL256S90FHSS40

$0.00 (not set)
Rohm Semiconductor

BR24G02-3

$0.00 (not set)
Alliance Memory, Inc.

AS7C164A-15JCN

$0.00 (not set)
Top