MT55L256L18F1F-10
Micron Technology Inc.
Micron Technology Inc.
ZBT SRAM, 256KX18, 7.5NS PBGA165
$4.48
Available to order
Reference Price (USD)
1+
$4.48000
500+
$4.4352
1000+
$4.3904
1500+
$4.3456
2000+
$4.3008
2500+
$4.256
Exquisite packaging
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MT55L256L18F1F-10
$4.48
Product details
Discover the MT55L256L18F1F-10 by Micron Technology Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The MT55L256L18F1F-10 features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The MT55L256L18F1F-10 is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this Micron Technology Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the MT55L256L18F1F-10, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Active
- Memory Type: -
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