Shopping cart

Subtotal: $0.00

MT53E512M64D2HJ-046 WT:B

Micron Technology Inc.
MT53E512M64D2HJ-046 WT:B Preview
Micron Technology Inc.
IC DRAM LPDDR4 32G 512MX64 FBGA
$49.69
Available to order
Reference Price (USD)
1+
$49.69000
500+
$49.1931
1000+
$48.6962
1500+
$48.1993
2000+
$47.7024
2500+
$47.2055
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Micron Technology Inc. MT53E512M64D2HJ-046 WT:B is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MT53E512M64D2HJ-046 WT:B

MT53E512M64D2HJ-046 WT:B

$49.69

Product details

Micron Technology Inc.'s MT53E512M64D2HJ-046 WT:B memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply. The MT53E512M64D2HJ-046 WT:B features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs. Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The MT53E512M64D2HJ-046 WT:B is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment. Discover the full potential of this Micron Technology Inc. memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the MT53E512M64D2HJ-046 WT:B to meet your project timeline and budget requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: -
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-TFBGA
  • Supplier Device Package: 556-TFBGA (12.4x12.4)

Viewed products

ISSI, Integrated Silicon Solution Inc

IS43LR16200D-6BLI-TR

$0.00 (not set)
Infineon Technologies

S29GL064N90DAI020

$0.00 (not set)
Infineon Technologies

CY7C1361C-133AXIT

$0.00 (not set)
Winbond Electronics

W66BL6NBUAGJ

$0.00 (not set)
Winbond Electronics

W632GG6NB-11

$0.00 (not set)
ISSI, Integrated Silicon Solution Inc

IS25LP032D-JBLA3

$0.00 (not set)
Texas Instruments

BQ2024DBZR

$0.00 (not set)
Microchip Technology

93LC46C-I/MS

$0.00 (not set)
Infineon Technologies

S25FL256SAGMFB003

$0.00 (not set)
Microchip Technology

93LC76AT-I/OT

$0.00 (not set)
Top