MT53E512M64D2HJ-046 WT:B
Micron Technology Inc.

Micron Technology Inc.
IC DRAM LPDDR4 32G 512MX64 FBGA
$49.69
Available to order
Reference Price (USD)
1+
$49.69000
500+
$49.1931
1000+
$48.6962
1500+
$48.1993
2000+
$47.7024
2500+
$47.2055
Exquisite packaging
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Micron Technology Inc. MT53E512M64D2HJ-046 WT:B is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Micron Technology Inc.'s MT53E512M64D2HJ-046 WT:B memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The MT53E512M64D2HJ-046 WT:B features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The MT53E512M64D2HJ-046 WT:B is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Micron Technology Inc. memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the MT53E512M64D2HJ-046 WT:B to meet your project timeline and budget requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: -
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 556-TFBGA
- Supplier Device Package: 556-TFBGA (12.4x12.4)