MT53E512M64D2HJ-046 WT:B TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM LPDDR4 32G 512MX64 FBGA
$38.01
Available to order
Reference Price (USD)
1+
$38.01000
500+
$37.6299
1000+
$37.2498
1500+
$36.8697
2000+
$36.4896
2500+
$36.1095
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Micron Technology Inc. MT53E512M64D2HJ-046 WT:B TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MT53E512M64D2HJ-046 WT:B TR
$38.01
Product details
Enhance your system's performance with the MT53E512M64D2HJ-046 WT:B TR memory IC from Micron Technology Inc., a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions.
The MT53E512M64D2HJ-046 WT:B TR boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems.
Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The MT53E512M64D2HJ-046 WT:B TR also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring.
Contact us today through our online inquiry system to learn more about the MT53E512M64D2HJ-046 WT:B TR and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Micron Technology Inc. memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: -
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 556-TFBGA
- Supplier Device Package: 556-TFBGA (12.4x12.4)
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