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MT53E512M32D1ZW-046 WT:B

Micron Technology Inc.
MT53E512M32D1ZW-046 WT:B Preview
Micron Technology Inc.
IC DRAM 16GBIT 2.133GHZ 200WFBGA
$25.60
Available to order
Reference Price (USD)
1+
$25.60000
500+
$25.344
1000+
$25.088
1500+
$24.832
2000+
$24.576
2500+
$24.32
Exquisite packaging
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Micron Technology Inc. MT53E512M32D1ZW-046 WT:B is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MT53E512M32D1ZW-046 WT:B

MT53E512M32D1ZW-046 WT:B

$25.60

Product details

Discover the MT53E512M32D1ZW-046 WT:B by Micron Technology Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The MT53E512M32D1ZW-046 WT:B features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The MT53E512M32D1ZW-046 WT:B is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Micron Technology Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the MT53E512M32D1ZW-046 WT:B, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: -
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)

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