MT53E2G32D4NQ-046 WT:C TR
Micron Technology Inc.

Micron Technology Inc.
IC MEMORY DRAM 64G 2GX32 FBGA
$64.80
Available to order
Reference Price (USD)
1+
$64.80000
500+
$64.152
1000+
$63.504
1500+
$62.856
2000+
$62.208
2500+
$61.56
Exquisite packaging
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EMS | 3-7 days |
Micron Technology Inc. MT53E2G32D4NQ-046 WT:C TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
The MT53E2G32D4NQ-046 WT:C TR by Micron Technology Inc. represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The MT53E2G32D4NQ-046 WT:C TR demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The MT53E2G32D4NQ-046 WT:C TR also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Micron Technology Inc. memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the MT53E2G32D4NQ-046 WT:C TR memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 64Gb (2G x 32)
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-VFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)