MT53E256M16D1DS-046 WT:B TR
Micron Technology Inc.

Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
$7.48
Available to order
Reference Price (USD)
1+
$7.48500
500+
$7.41015
1000+
$7.3353
1500+
$7.26045
2000+
$7.1856
2500+
$7.11075
Exquisite packaging
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Micron Technology Inc. MT53E256M16D1DS-046 WT:B TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Optimize your system's memory performance with the MT53E256M16D1DS-046 WT:B TR from Micron Technology Inc., a versatile IC solution for diverse storage requirements. This memory product offers an ideal combination of speed, density, and power efficiency, suitable for both volatile and non-volatile applications. Its flexible architecture supports various system configurations.
The MT53E256M16D1DS-046 WT:B TR features include burst mode operation, low-latency access, and configurable I/O options. These capabilities enable efficient data handling in performance-sensitive applications. The memory IC demonstrates excellent thermal characteristics, ensuring reliable operation in high-temperature environments. Its design incorporates noise reduction techniques for signal integrity.
Application areas include server memory modules, graphics processing units, and network switches. The MT53E256M16D1DS-046 WT:B TR is equally effective in digital cameras, gaming consoles, and audio processing equipment. Industrial applications include CNC machinery, test and measurement systems, and building automation controllers requiring dependable memory solutions.
Request detailed information about this Micron Technology Inc. memory IC by submitting an online inquiry. Our team provides comprehensive support from technical consultation to volume procurement of the MT53E256M16D1DS-046 WT:B TR, ensuring optimal memory solutions for your specific needs.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -