MT53E1G32D2FW-046 WT:B TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 32GBIT 2.133GHZ 200VFBGA
$38.01
Available to order
Reference Price (USD)
1+
$38.01000
500+
$37.6299
1000+
$37.2498
1500+
$36.8697
2000+
$36.4896
2500+
$36.1095
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Micron Technology Inc. MT53E1G32D2FW-046 WT:B TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MT53E1G32D2FW-046 WT:B TR
$38.01
Product details
The MT53E1G32D2FW-046 WT:B TR memory IC from Micron Technology Inc. provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements.
Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The MT53E1G32D2FW-046 WT:B TR incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration.
Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems.
For complete technical details and purchasing information about this Micron Technology Inc. memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the MT53E1G32D2FW-046 WT:B TR in your specific application, along with competitive pricing options.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: -
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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