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MT53E128M32D2DS-053 WT:A TR

Micron Technology Inc.
MT53E128M32D2DS-053 WT:A TR Preview
Micron Technology Inc.
IC DRAM 4GBIT 1.866GHZ 200WFBGA
$7.20
Available to order
Reference Price (USD)
1+
$7.20000
500+
$7.128
1000+
$7.056
1500+
$6.984
2000+
$6.912
2500+
$6.84
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Micron Technology Inc. MT53E128M32D2DS-053 WT:A TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MT53E128M32D2DS-053 WT:A TR

MT53E128M32D2DS-053 WT:A TR

$7.20

Product details

Introducing the MT53E128M32D2DS-053 WT:A TR from Micron Technology Inc., a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments. Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The MT53E128M32D2DS-053 WT:A TR incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions. The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The MT53E128M32D2DS-053 WT:A TR also serves well in smart city infrastructure and portable military communication devices. For detailed technical information and purchasing options for this Micron Technology Inc. memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the MT53E128M32D2DS-053 WT:A TR to ensure successful implementation in your design.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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