Shopping cart

Subtotal: $0.00

VP2206N2

Microchip Technology
VP2206N2 Preview
Microchip Technology
MOSFET P-CH 60V 750MA TO39
$18.39
Available to order
Reference Price (USD)
1+
$13.50000
25+
$12.37640
100+
$12.02630
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology VP2206N2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
VP2206N2

VP2206N2

$18.39

Product details

Enhance your electronic designs with the VP2206N2 single MOSFET transistor from Microchip Technology, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The VP2206N2 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the VP2206N2 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the VP2206N2 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can

Viewed products

Nexperia USA Inc.

BUK7M33-60EX

$0.00 (not set)
IXYS

IXFH80N25X3

$0.00 (not set)
Infineon Technologies

IRLSL4030PBF

$0.00 (not set)
IXYS

IXFT80N65X2HV

$0.00 (not set)
onsemi

NTP190N65S3HF

$0.00 (not set)
Renesas Electronics America Inc

2SK2499-AZ

$0.00 (not set)
Infineon Technologies

ISS17EP06LMXTSA1

$0.00 (not set)
IXYS

IXFH24N90P

$0.00 (not set)
Infineon Technologies

IPP120N08S403AKSA1

$0.00 (not set)
Microchip Technology

APT12060LVRG

$0.00 (not set)
Top