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UM4006D

Microchip Technology
UM4006D Preview
Microchip Technology
SI PPIN HERMETIC STUD
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UM4006D

UM4006D

$0.00

Product details

The UM4006D from Microchip Technology is a high-performance RF diode designed for precision signal processing in demanding applications. As part of the Discrete Semiconductor Products category, this diode excels in radio frequency circuits, offering exceptional reliability and efficiency. Its advanced design ensures minimal signal loss, making it ideal for high-frequency environments. Whether you're working on communication systems or radar technology, the UM4006D delivers consistent performance. The diode's robust construction allows it to withstand harsh operating conditions while maintaining signal integrity. With its superior thermal management, this component remains stable even under continuous use. Engineers and designers trust Microchip Technology's RF diodes for critical applications where precision and durability are paramount. Key features include low noise operation, fast response times, and excellent impedance matching capabilities. These characteristics make the UM4006D versatile across various RF applications. The diode's compact form factor enables easy integration into existing circuit designs without compromising performance. Common applications include wireless communication base stations, satellite receivers, and military radar systems. For medical equipment requiring precise RF signal control or industrial heating systems needing reliable frequency generation, this diode proves invaluable. When you need top-tier RF components for your next project, consider the UM4006D from Microchip Technology. Visit our website today to submit your inquiry and discover how this RF diode can enhance your system's performance. Our team stands ready to assist with technical specifications and bulk pricing options for your specific requirements.

General specs

  • Product Status: Active
  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 600V
  • Current - Max: -
  • Capacitance @ Vr, F: 3pF @ 100V, 1MHz
  • Resistance @ If, F: 500mOhm @ 100mA, 100MHz
  • Power Dissipation (Max): 18.75 W
  • Operating Temperature: -65°C ~ 175°C
  • Package / Case: Stud
  • Supplier Device Package: -

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