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TN0110N3-G

Microchip Technology
TN0110N3-G Preview
Microchip Technology
MOSFET N-CH 100V 350MA TO92-3
$1.31
Available to order
Reference Price (USD)
1+
$0.90000
25+
$0.75200
100+
$0.67980
Exquisite packaging
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TN0110N3-G

TN0110N3-G

$1.31

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)

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