MV2N5116UB
Microchip Technology
Microchip Technology
JFET
$103.71
Available to order
Reference Price (USD)
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$103.71000
500+
$102.6729
1000+
$101.6358
1500+
$100.5987
2000+
$99.5616
2500+
$98.5245
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MV2N5116UB
$103.71
Product details
Enhance your circuit designs with the MV2N5116UB JFET transistor from Microchip Technology, a standout in the Discrete Semiconductor Products lineup. This transistor is optimized for low-noise applications, offering exceptional signal clarity and efficiency. Its design focuses on minimizing power loss while maximizing performance, making it a preferred choice for battery-operated devices. The MV2N5116UB excels in environments where signal integrity is paramount, such as in instrumentation and measurement systems. Features like high gain and low leakage current ensure reliable operation in demanding scenarios. Applications span across audio processing, signal conditioning, and RF modulation. Industries leveraging this technology include consumer electronics, aerospace, and industrial automation. The MV2N5116UB is also well-suited for use in test and measurement equipment, where accuracy is critical. To explore how this JFET transistor can benefit your projects, contact us for a detailed quote and technical support.
General specs
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Resistance - RDS(On): 175 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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