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MSR2N2222AUA/TR

Microchip Technology
MSR2N2222AUA/TR Preview
Microchip Technology
RH SMALL-SIGNAL BJT
$172.68
Available to order
Reference Price (USD)
1+
$172.68000
500+
$170.9532
1000+
$169.2264
1500+
$167.4996
2000+
$165.7728
2500+
$164.046
Exquisite packaging
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Microchip Technology MSR2N2222AUA/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MSR2N2222AUA/TR

MSR2N2222AUA/TR

$172.68

Product details

The MSR2N2222AUA/TR by Microchip Technology is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the MSR2N2222AUA/TR ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The MSR2N2222AUA/TR is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the MSR2N2222AUA/TR delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA

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