MSCSM120TAM16CTPAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6P
$854.48
Available to order
Reference Price (USD)
1+
$854.48500
500+
$845.94015
1000+
$837.3953
1500+
$828.85045
2000+
$820.3056
2500+
$811.76075
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Product details
General specs
- Product Status: Active
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 728W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P