MSCSM120DDUM16CTBL3NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL3
$648.09
Available to order
Reference Price (USD)
1+
$648.09000
500+
$641.6091
1000+
$635.1282
1500+
$628.6473
2000+
$622.1664
2500+
$615.6855
Exquisite packaging
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MSCSM120DDUM16CTBL3NG
$648.09
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel, Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 560W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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