MSCSM120AM03CT6LIAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6C LI
$1,405.87
Available to order
Reference Price (USD)
1+
$1405.87000
500+
$1391.8113
1000+
$1377.7526
1500+
$1363.6939
2000+
$1349.6352
2500+
$1335.5765
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV
- Power - Max: 3.215kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI