MSCMC120AM03CT6LIAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6C LI
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microchip Technology MSCMC120AM03CT6LIAG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MSCMC120AM03CT6LIAG
$0.00
Product details
The MSCMC120AM03CT6LIAG by Microchip Technology is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe MSCMC120AM03CT6LIAG features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the MSCMC120AM03CT6LIAG. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 631A (Tc)
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V
- Vgs(th) (Max) @ Id: 4V @ 150mA
- Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V
- Power - Max: 2778W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
Viewed products