MSC080SMA120B
Microchip Technology
Microchip Technology
SICFET N-CH 1200V 37A TO247-3
$11.67
Available to order
Reference Price (USD)
1+
$11.67000
500+
$11.5533
1000+
$11.4366
1500+
$11.3199
2000+
$11.2032
2500+
$11.0865
Exquisite packaging
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MSC080SMA120B
$11.67
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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