MSC040SMA120J
Microchip Technology
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Microchip Technology
SICFET N-CH 1200V 53A SOT227
$37.15
Available to order
Reference Price (USD)
1+
$37.15000
500+
$36.7785
1000+
$36.407
1500+
$36.0355
2000+
$35.664
2500+
$35.2925
Exquisite packaging
Discount
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC