JANTXV2N1711S
Microchip Technology

Microchip Technology
TRANS NPN 30V 0.5A TO39
$82.50
Available to order
Reference Price (USD)
1+
$82.50000
500+
$81.675
1000+
$80.85
1500+
$80.025
2000+
$79.2
2500+
$78.375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Microchip Technology JANTXV2N1711S is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
Product details
The JANTXV2N1711S by Microchip Technology is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the JANTXV2N1711S ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The JANTXV2N1711S is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the JANTXV2N1711S delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)