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JANTX2N6987U

Microchip Technology
JANTX2N6987U Preview
Microchip Technology
NPN TRANSISTOR
$80.92
Available to order
Reference Price (USD)
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$80.92500
500+
$80.11575
1000+
$79.3065
1500+
$78.49725
2000+
$77.688
2500+
$76.87875
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JANTX2N6987U

JANTX2N6987U

$80.92

Product details

Microchip Technology's JANTX2N6987U represents the pinnacle of Bipolar Junction Transistor (BJT) Array technology within Discrete Semiconductor Products. This innovative solution combines multiple transistors in a single package, optimized for synchronized operation. The JANTX2N6987U delivers exceptional current handling capacity with minimal voltage drop across junctions. Its symmetrical design ensures identical performance characteristics for all included transistors. The product features enhanced electrostatic discharge protection for improved reliability. With its wide operating temperature range, it performs consistently in diverse environments. The JANTX2N6987U is particularly valuable for applications requiring matched transistor pairs or groups. Its low saturation voltage contributes to energy-efficient circuit designs. This BJT Array demonstrates excellent frequency response for high-speed applications. Common applications include precision voltage regulators in power supply units. Audio processing equipment benefits from its low distortion characteristics. Test and measurement instruments utilize its stable parameters for accurate readings. The JANTX2N6987U also serves critical functions in aerospace electronics systems. Microchip Technology has engineered this product to meet rigorous industry standards for quality and performance. Its lead-free construction complies with modern environmental regulations. For engineers seeking reliable, high-performance transistor arrays, the JANTX2N6987U offers an optimal solution. Visit our website to submit your inquiry about this versatile semiconductor component today.

General specs

  • Product Status: Active
  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD

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